MPS6652RLRAG
- Mfr.Part #
- MPS6652RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO92
- Stock
- 38,251
- In Stock :
- 38,251
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 600mV
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 50
- JESD-609 Code :
- e1
- Frequency :
- 100MHz
- Mount :
- Through Hole
- Voltage - Rated DC :
- -40V
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 1A
- Transistor Type :
- PNP
- Base Part Number :
- MPS6652
- Current Rating :
- -1A
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 4V
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- Turn On Time-Max (ton) :
- 280ns
- ECCN Code :
- EAR99
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 625W
- Turn Off Time-Max (toff) :
- 75ns
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Datasheets
- MPS6652RLRAG

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS6652RLRAG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 1A volts.
MPS6652RLRAG Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is -1A
a transition frequency of 100MHz
MPS6652RLRAG Applications
There are a lot of ON Semiconductor
MPS6652RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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