MPS6652RLRA
- Mfr.Part #
- MPS6652RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO92
- Stock
- 13,748
- In Stock :
- 13,748
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4V
- Current Rating :
- -1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Reel (TR)
- HTS Code :
- 8541.21.00.95
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 600mV
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- hFE Min :
- 50
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Base Part Number :
- MPS6652
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- PNP
- Max Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 240
- Collector Base Voltage (VCBO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Reach Compliance Code :
- not_compliant
- Mount :
- Through Hole
- Voltage - Rated DC :
- -40V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- AMPLIFIER
- Current - Collector (Ic) (Max) :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 55ns
- Collector Emitter Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Collector Emitter Saturation Voltage :
- 600mV
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 1A
- Lead Free :
- Contains Lead
- Turn Off Time-Max (toff) :
- 300ns
- JESD-30 Code :
- O-PBCY-T3
- Datasheets
- MPS6652RLRA
MPS6652RLRA Documents

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS6652RLRA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
MPS6652RLRA Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is -1A
a transition frequency of 100MHz
MPS6652RLRA Applications
There are a lot of ON Semiconductor
MPS6652RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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