MPS6652G
- Mfr.Part #
- MPS6652G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO92
- Stock
- 189,136
- In Stock :
- 189,136
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Weight :
- 4.535924g
- Turn Off Time-Max (toff) :
- 75ns
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Emitter Saturation Voltage :
- 600mV
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Current Rating :
- -1A
- Collector Base Voltage (VCBO) :
- 40V
- Voltage - Rated DC :
- -40V
- Height :
- 6.35mm
- Power - Max :
- 625mW
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Time-Max (ton) :
- 280ns
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625W
- Number of Elements :
- 1
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2007
- Packaging :
- Bulk
- Transistor Type :
- PNP
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 50
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity/Channel Type :
- PNP
- Width :
- 6.35mm
- Length :
- 6.35mm
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Base Part Number :
- MPS6652
- Max Collector Current :
- 1A
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 40V
- Datasheets
- MPS6652G
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS6652G Overview
This device has a DC current gain of 50 @ 500mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 100MHz.The maximum collector current is 1A volts.
MPS6652G Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is -1A
a transition frequency of 100MHz
MPS6652G Applications
There are a lot of ON Semiconductor
MPS6652G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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