MPS6652G

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Mfr.Part #
MPS6652G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 40V 1A TO92
Stock
189,136
In Stock :
189,136

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency :
100MHz
RoHS Status :
RoHS Compliant
Weight :
4.535924g
Turn Off Time-Max (toff) :
75ns
Emitter Base Voltage (VEBO) :
4V
Collector Emitter Saturation Voltage :
600mV
Current - Collector Cutoff (Max) :
100nA
Number of Pins :
3
Current Rating :
-1A
Collector Base Voltage (VCBO) :
40V
Voltage - Rated DC :
-40V
Height :
6.35mm
Power - Max :
625mW
ECCN Code :
EAR99
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
260
Turn On Time-Max (ton) :
280ns
JESD-609 Code :
e1
Mounting Type :
Through Hole
Power Dissipation :
625W
Number of Elements :
1
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 1V
Operating Temperature :
-55°C~150°C TJ
Published :
2007
Packaging :
Bulk
Transistor Type :
PNP
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 6 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
40
hFE Min :
50
Gain Bandwidth Product :
100MHz
Radiation Hardening :
No
Lead Free :
Lead Free
Terminal Position :
BOTTOM
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Transition Frequency :
100MHz
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Polarity/Channel Type :
PNP
Width :
6.35mm
Length :
6.35mm
Max Power Dissipation :
625mW
Element Configuration :
Single
Base Part Number :
MPS6652
Max Collector Current :
1A
Pbfree Code :
yes
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
30V
Transistor Application :
AMPLIFIER
Collector Emitter Breakdown Voltage :
40V
Datasheets
MPS6652G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS6652G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Base Part Number:MPS6652, MPS6652G pinout, MPS6652G datasheet PDF, MPS6652G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS6652G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS6652G


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

MPS6652G Overview


This device has a DC current gain of 50 @ 500mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 100MHz.The maximum collector current is 1A volts.

MPS6652G Features


the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is -1A
a transition frequency of 100MHz


MPS6652G Applications


There are a lot of ON Semiconductor
MPS6652G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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