MPS6651G

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Mfr.Part #
MPS6651G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 25V 1A TO92
Stock
20,289
In Stock :
20,289

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
PNP
Turn Off Time-Max (toff) :
75ns
Configuration :
Single
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Turn On Time-Max (ton) :
280ns
Terminal Finish :
TIN SILVER COPPER
Current - Collector Cutoff (Max) :
100nA
Transition Frequency :
100MHz
Power - Max :
625mW
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e1
Number of Elements :
1
Packaging :
Bulk
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
1A
Transistor Element Material :
SILICON
Terminal Position :
BOTTOM
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 1V
RoHS Status :
ROHS3 Compliant
Frequency - Transition :
100MHz
JESD-30 Code :
O-PBCY-T3
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Qualification Status :
COMMERCIAL
Transistor Application :
AMPLIFIER
Pbfree Code :
yes
Transistor Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
25V
Datasheets
MPS6651G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS6651G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), MPS6651G pinout, MPS6651G datasheet PDF, MPS6651G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS6651G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS6651G


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

MPS6651G Overview


In this device, the DC current gain is 50 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 25V.

MPS6651G Features


the DC current gain for this device is 50 @ 500mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 100MHz


MPS6651G Applications


There are a lot of Rochester Electronics, LLC
MPS6651G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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