MPS6602G
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- Mfr.Part #
- MPS6602G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 7,472
- In Stock ：
- 7,472
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Element Configuration :
- Single
- Current Rating :
- 1A
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Base Voltage (VCBO) :
- 45V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Saturation Voltage :
- 600mV
- HTS Code :
- 8541.21.00.95
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Voltage - Rated DC :
- 40V
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 40V
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e1
- Max Collector Current :
- 1A
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Published :
- 2006
- Transistor Application :
- AMPLIFIER
- Turn On Time-Max (ton) :
- 55ns
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Voltage (VCEO) :
- 600mV
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 50
- Datasheets
- MPS6602G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS6602G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 1A volts.
MPS6602G Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6602G Applications
There are a lot of ON Semiconductor
MPS6602G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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