MPS6602
- Mfr.Part #
- MPS6602
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 110
- In Stock :
- 110
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Contains Lead
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 45V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 4V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- 40V
- Gain Bandwidth Product :
- 100MHz
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- hFE Min :
- 50
- Peak Reflow Temperature (Cel) :
- 240
- Collector Emitter Breakdown Voltage :
- 40V
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Turn On Time-Max (ton) :
- 55ns
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 1A
- Number of Elements :
- 1
- Max Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 600mV
- Collector Emitter Saturation Voltage :
- 600mV
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.95
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- JESD-609 Code :
- e0
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1A
- Datasheets
- MPS6602
MPS6602 Documents
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS6602 Overview
DC current gain in this device equals 50 @ 500mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 100mA, 1A.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 1A volts.
MPS6602 Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6602 Applications
There are a lot of ON Semiconductor
MPS6602 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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