MPS6601RLRAG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA

Frequency :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2007

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Collector Current :

1A

Turn On Time-Max (ton) :

280ns

Max Breakdown Voltage :

25V

Transistor Application :

AMPLIFIER

Terminal Position :

BOTTOM

Transition Frequency :

100MHz

Mount :

Through Hole

Transistor Type :

NPN

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Polarity/Channel Type :

NPN

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Max Power Dissipation :

625mW

Collector Emitter Saturation Voltage :

600mV

ECCN Code :

EAR99

Number of Elements :

1

JESD-609 Code :

e1

Number of Terminations :

3

Current Rating :

1A

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Gain Bandwidth Product :

100MHz

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Voltage - Rated DC :

25V

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 1V

RoHS Status :

RoHS Compliant

hFE Min :

50

Turn Off Time-Max (toff) :

75ns

Mounting Type :

Through Hole

Pin Count :

3

Collector Base Voltage (VCBO) :

25V

Collector Emitter Voltage (VCEO) :

25V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

25V

Pbfree Code :

yes

Base Part Number :

MPS6601

Emitter Base Voltage (VEBO) :

4V

Power Dissipation :

625W