MPS6601RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

100MHz

Max Collector Current :

1A

Current Rating :

1A

Collector Emitter Saturation Voltage :

600mV

Collector Base Voltage (VCBO) :

25V

Gain Bandwidth Product :

100MHz

Terminal Position :

BOTTOM

Voltage - Rated DC :

25V

Current - Collector Cutoff (Max) :

100nA

Collector Emitter Breakdown Voltage :

25V

Number of Elements :

1

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

240

Turn On Time-Max (ton) :

55ns

Element Configuration :

Single

JESD-609 Code :

e0

Polarity/Channel Type :

NPN

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

RoHS Status :

Non-RoHS Compliant

Collector Emitter Voltage (VCEO) :

25V

Emitter Base Voltage (VEBO) :

4V

Lead Free :

Contains Lead

Number of Pins :

3

Max Power Dissipation :

625mW

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.95

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 1V

Packaging :

Tape and Reel (TR)

Base Part Number :

MPS6601

Mounting Type :

Through Hole

Number of Terminations :

3

Published :

2006

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

hFE Min :

50