MPS6601G
- Mfr.Part #
- MPS6601G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1A TO92
- Stock
- 2,888
- In Stock :
- 2,888
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-PBCY-T3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Max (toff) :
- 300ns
- JESD-609 Code :
- e1
- Qualification Status :
- COMMERCIAL
- Packaging :
- Bulk
- Frequency - Transition :
- 100MHz
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 55ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 625mW
- Terminal Finish :
- TIN SILVER COPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Transition Frequency :
- 100MHz
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 1A
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- MPS6601G
MPS6601G Documents
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS6601G Overview
This device has a DC current gain of 50 @ 500mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 25V maximal voltage is present.
MPS6601G Features
the DC current gain for this device is 50 @ 500mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 100MHz
MPS6601G Applications
There are a lot of Rochester Electronics, LLC
MPS6601G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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