MPS6601G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Turn Off Time-Max (toff) :

300ns

Voltage - Collector Emitter Breakdown (Max) :

25V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 1V

Polarity/Channel Type :

NPN

Number of Terminations :

3

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e1

Transition Frequency :

100MHz

Surface Mount :

No

Frequency - Transition :

100MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

100nA

Packaging :

Bulk

Pbfree Code :

yes

Turn On Time-Max (ton) :

55ns

Power - Max :

625mW

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

1A

Number of Elements :

1

Mounting Type :

Through Hole

Configuration :

Single

Terminal Finish :

TIN SILVER COPPER

JESD-30 Code :

O-PBCY-T3