MPS6601

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Mfr.Part #
MPS6601
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 25V 1A TO92
Stock
39,983
In Stock :
39,983

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Packaging :
Bulk
Qualification Status :
COMMERCIAL
Polarity/Channel Type :
NPN
Frequency - Transition :
100MHz
Time@Peak Reflow Temperature-Max (s) :
30
JESD-609 Code :
e0
Number of Terminations :
3
Turn Off Time-Max (toff) :
300ns
Peak Reflow Temperature (Cel) :
240
Transistor Application :
AMPLIFIER
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 1V
JESD-30 Code :
O-PBCY-T3
Voltage - Collector Emitter Breakdown (Max) :
25V
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
NPN
Surface Mount :
No
Turn On Time-Max (ton) :
55ns
Configuration :
Single
Transition Frequency :
100MHz
Current - Collector Cutoff (Max) :
100nA
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
RoHS Status :
Non-RoHS Compliant
Pin Count :
3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Mounting Type :
Through Hole
Power - Max :
625mW
Transistor Element Material :
SILICON
Terminal Finish :
TIN LEAD
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Current - Collector (Ic) (Max) :
1A
Terminal Position :
BOTTOM
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS6601 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, MPS6601 pinout, MPS6601 datasheet PDF, MPS6601 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS6601 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS6601


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

MPS6601 Overview


In this device, the DC current gain is 50 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 25V.

MPS6601 Features


the DC current gain for this device is 50 @ 500mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 100MHz


MPS6601 Applications


There are a lot of Rochester Electronics, LLC
MPS6601 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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