MPS6601
- Mfr.Part #
- MPS6601
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1A TO92
- Stock
- 39,983
- In Stock :
- 39,983
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- O-PBCY-T3
- Mounting Type :
- Through Hole
- Turn On Time-Max (ton) :
- 55ns
- Terminal Finish :
- TIN LEAD
- Configuration :
- Single
- Power - Max :
- 625mW
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 240
- Qualification Status :
- COMMERCIAL
- Pbfree Code :
- yes
- JESD-609 Code :
- e0
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Frequency - Transition :
- 100MHz
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 300ns
- Datasheets
- MPS6601
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS6601 Overview
In this device, the DC current gain is 50 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 25V.
MPS6601 Features
the DC current gain for this device is 50 @ 500mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 100MHz
MPS6601 Applications
There are a lot of Rochester Electronics, LLC
MPS6601 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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