MPS6561
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- Mfr.Part #
- MPS6561
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.6A TO92-3
- Stock
- 7,114
- In Stock ：
- 7,114
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 350mA 1V
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Frequency - Transition :
- 60MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 35mA, 350mA
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-92-3
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector (Ic) (Max) :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 625mW
- Mounting Type :
- Through Hole
- Datasheets
- MPS6561
,TO-226_straightlead.jpg)
NPN 100nA TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS6561 Overview
In this device, the DC current gain is 50 @ 350mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 35mA, 350mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 20V.
MPS6561 Features
the DC current gain for this device is 50 @ 350mA 1V
the vce saturation(Max) is 500mV @ 35mA, 350mA
the supplier device package of TO-92-3
MPS6561 Applications
There are a lot of ON Semiconductor
MPS6561 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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