MPS6560G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Voltage - Rated DC :

25V

Transistor Element Material :

SILICON

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 1V

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

60MHz

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Frequency :

60MHz

Pin Count :

3

ECCN Code :

EAR99

Power Dissipation :

625mW

Transition Frequency :

60MHz

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA

Number of Terminations :

3

Terminal Position :

BOTTOM

JESD-609 Code :

e1

Collector Emitter Voltage (VCEO) :

25V

Qualification Status :

Not Qualified

Collector Emitter Saturation Voltage :

500mV

Max Collector Current :

500mA

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

25V

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

35

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Mount :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Current Rating :

500mA

Lifecycle Status :

OBSOLETE (Last Updated: 1 day ago)

Transistor Application :

AMPLIFIER

Number of Pins :

3

Polarity/Channel Type :

NPN

Published :

2006

Number of Elements :

1

Packaging :

Bulk