MPS6560G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

25V

Mounting Type :

Through Hole

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 1V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

25V

Lead Free :

Lead Free

Pin Count :

3

JESD-609 Code :

e1

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration :

Single

Collector Base Voltage (VCBO) :

25V

Transistor Type :

NPN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

500mA

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

Mount :

Through Hole

Current Rating :

500mA

Max Power Dissipation :

625mW

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Voltage - Rated DC :

25V

Frequency :

60MHz

Number of Elements :

1

Packaging :

Bulk

Power Dissipation :

625mW

Published :

2006

Transition Frequency :

60MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

60MHz

Lifecycle Status :

OBSOLETE (Last Updated: 1 day ago)

Current - Collector Cutoff (Max) :

100nA

Polarity/Channel Type :

NPN

hFE Min :

35

Number of Pins :

3

Collector Emitter Saturation Voltage :

500mV