MPS6560
- Mfr.Part #
- MPS6560
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN SS GP 25V TO92
- Stock
- 6,862
- In Stock :
- 6,862
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Frequency :
- 60MHz
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- hFE Min :
- 35
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 60MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Packaging :
- Bulk
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Published :
- 2006
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Base Voltage (VCBO) :
- 25V
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Elements :
- 1
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 25V
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 25V
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current Rating :
- 500mA
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 60MHz
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MPS6560
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS6560G Overview
This device has a DC current gain of 50 @ 500mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 60MHz.The maximum collector current is 500mA volts.
MPS6560G Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 60MHz
MPS6560G Applications
There are a lot of ON Semiconductor
MPS6560G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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