MPS2907AZL1G
- Mfr.Part #
- MPS2907AZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO92
- Stock
- 13,285
- In Stock :
- 13,285
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 625mW
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Operating Temperature :
- 150°C
- Gain Bandwidth Product :
- 200MHz
- hFE Min :
- 75
- Min Operating Temperature :
- -55°C
- Terminal Form :
- Wire
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- EUROPEAN PART NUMBER
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- -60V
- Terminal Position :
- BOTTOM
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Base Part Number :
- MPS2907A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Published :
- 2010
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- -1.6V
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Mount :
- Through Hole
- Frequency :
- 200MHz
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 200MHz
- Turn On Time-Max (ton) :
- 45ns
- Voltage - Rated DC :
- -60V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Current Rating :
- -600mA
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 600mA
- Datasheets
- MPS2907AZL1G

PNP 10nA ICBO 1 Elements 3 Terminations PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS2907AZL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MPS2907AZL1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MPS2907AZL1G Applications
There are a lot of ON Semiconductor
MPS2907AZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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