MPS2222AG
- Mfr.Part #
- MPS2222AG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Gain Bandwidth Product :
- 300MHz
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Silver, Tin
- Surface Mount :
- No
- Max Collector Current :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lead Free :
- Lead Free
- Base Part Number :
- MPS2222
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Transition Frequency :
- 300MHz
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Current Rating :
- 600mA
- Number of Elements :
- 1
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 40V
- Turn Off Time-Max (toff) :
- 285ns
- Length :
- 5.1816mm
- Collector Base Voltage (VCBO) :
- 75V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 625mW
- hFE Min :
- 100
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 1V
- Frequency :
- 300MHz
- Width :
- 4.191mm
- Mounting Type :
- Through Hole
- Height :
- 5.334mm
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Type :
- GENERAL PURPOSE
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Voltage - Rated DC :
- 40V
- Weight :
- 4.535924g
- Datasheets
- MPS2222AG
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS2222AG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.In the part, the transition frequency is 300MHz.A maximum collector current of 600mA volts can be achieved.
MPS2222AG Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MPS2222AG Applications
There are a lot of ON Semiconductor
MPS2222AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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