MPS2222ARLRP
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- Mfr.Part #
- MPS2222ARLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 6,507
- In Stock ：
- 6,507
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Contains Lead
- Transition Frequency :
- 300MHz
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Qualification Status :
- Not Qualified
- Turn Off Time-Max (toff) :
- 285ns
- Collector Emitter Voltage (VCEO) :
- 1V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 300MHz
- Current Rating :
- 600mA
- Peak Reflow Temperature (Cel) :
- 240
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Base Voltage (VCBO) :
- 75V
- Collector Emitter Saturation Voltage :
- 1V
- hFE Min :
- 35
- Published :
- 2001
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- MPS2222
- Max Power Dissipation :
- 625mW
- Transistor Type :
- NPN
- HTS Code :
- 8541.21.00.75
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 600mA
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Datasheets
- MPS2222ARLRP
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS2222ARLRP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 600mA volts.
MPS2222ARLRP Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MPS2222ARLRP Applications
There are a lot of ON Semiconductor
MPS2222ARLRP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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