MPS2907ARLRMG
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- Mfr.Part #
- MPS2907ARLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO92
- Stock
- 5,225
- In Stock ：
- 5,225
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Collector Base Voltage (VCBO) :
- -60V
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2010
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- -60V
- Gain Bandwidth Product :
- 200MHz
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Transition Frequency :
- 200MHz
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 75
- Collector Emitter Saturation Voltage :
- -1.6V
- Turn On Time-Max (ton) :
- 45ns
- Collector Emitter Breakdown Voltage :
- 60V
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Frequency :
- 200MHz
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MPS2907A
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Max Collector Current :
- 600mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -600mA
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Reach Compliance Code :
- Unknown
- Datasheets
- MPS2907ARLRMG
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS2907ARLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 600mA volts.
MPS2907ARLRMG Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MPS2907ARLRMG Applications
There are a lot of ON Semiconductor
MPS2907ARLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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