MPS2369G
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- Mfr.Part #
- MPS2369G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A TO92
- Stock
- 43,425
- In Stock ：
- 43,425
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 15V
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- O-PBCY-T3
- Transition Frequency :
- 500MHz
- Voltage - Rated DC :
- 15V
- Max Collector Current :
- 200mA
- Collector Base Voltage (VCBO) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 250mV
- JESD-609 Code :
- e1
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- HTS Code :
- 8541.21.00.95
- hFE Min :
- 20
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Base Part Number :
- MPS2369
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 250mV
- Current - Collector Cutoff (Max) :
- 400nA
- Pin Count :
- 3
- Turn On Time-Max (ton) :
- 12ns
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Qualification Status :
- Not Qualified
- Turn Off Time-Max (toff) :
- 18ns
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 4.5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Current Rating :
- 200mA
- Datasheets
- MPS2369G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS2369G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 1V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 500MHz is present in the part.Collector current can be as low as 200mA volts at its maximum.
MPS2369G Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MPS2369G Applications
There are a lot of ON Semiconductor
MPS2369G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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