MMSTA63-7-F
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- Mfr.Part #
- MMSTA63-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT323
- Stock
- 303
- In Stock ：
- 303
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP - Darlington
- Height :
- 1mm
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Frequency - Transition :
- 125MHz
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- -30V
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Current Rating :
- -500mA
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Pin Count :
- 3
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Length :
- 2.2mm
- hFE Min :
- 5000
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 30V
- Power - Max :
- 200mW
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Weight :
- 6.010099mg
- Factory Lead Time :
- 19 Weeks
- Polarity :
- PNP
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 125MHz
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Saturation Voltage :
- 1.5V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Base Part Number :
- MMSTA63
- Emitter Base Voltage (VEBO) :
- 10V
- Width :
- 1.35mm
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- MMSTA63-7-F
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMSTA63-7-F Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMSTA63-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMSTA63-7-F Applications
There are a lot of Diodes Incorporated
MMSTA63-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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