MMST5551
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- Mfr.Part #
- MMST5551
- Manufacturer
- YANGJIE
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- SOT-323 NPN 0.2W 0.6A 180V Trans
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 300MHz
- Number of Elements :
- 1
- Package / Case :
- SC-70, SOT-323
- Polarity :
- NPN
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 160V
- Mount :
- Surface Mount
- Width :
- 1.35mm
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Supplier Device Package :
- SOT-323
- Radiation Hardening :
- No
- Published :
- 2007
- Max Breakdown Voltage :
- 160V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 200mW
- Max Collector Current :
- 200mA
- hFE Min :
- 80
- Current - Collector (Ic) (Max) :
- 200mA
- Power - Max :
- 200mW
- Collector Emitter Breakdown Voltage :
- 160V
- Length :
- 2.2mm
- Termination :
- SMD/SMT
- Base Part Number :
- MMST5551
- Max Operating Temperature :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1mm
- Frequency :
- 300MHz
- Weight :
- 6.010099mg
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Base Voltage (VCBO) :
- 180V
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 200mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Emitter Base Voltage (VEBO) :
- 6V
- Max Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Gain Bandwidth Product :
- 300MHz
- Element Configuration :
- Single
- Current Rating :
- 200mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 19 Weeks
- Voltage - Rated DC :
- 160V
- Datasheets
- MMST5551
NPN -55°C~150°C TJ 50nA ICBO 1 Elements SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMST5551-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 160V volts.This product comes in a SOT-323 device package from the supplier.Device displays Collector Emitter Breakdown (160V maximal voltage).Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMST5551-7-F Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
the supplier device package of SOT-323
MMST5551-7-F Applications
There are a lot of Diodes Incorporated
MMST5551-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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