MMST5551

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Mfr.Part #
MMST5551
Manufacturer
YANGJIE
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
SOT-323 NPN 0.2W 0.6A 180V Trans
Stock
15,000
In Stock :
15,000

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Manufacturer :
YANGJIE
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
160V
Current Rating :
200mA
Element Configuration :
Single
Max Collector Current :
200mA
Width :
1.35mm
Mounting Type :
Surface Mount
Power Dissipation :
200mW
Weight :
6.010099mg
Published :
2007
Termination :
SMD/SMT
Collector Emitter Saturation Voltage :
200mV
Current - Collector (Ic) (Max) :
200mA
Min Operating Temperature :
-55°C
REACH SVHC :
No SVHC
Package / Case :
SC-70, SOT-323
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
SOT-323
Max Frequency :
300MHz
Mount :
Surface Mount
Polarity :
NPN
Frequency - Transition :
300MHz
Max Operating Temperature :
150°C
Collector Base Voltage (VCBO) :
180V
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
160V
Number of Elements :
1
Base Part Number :
MMST5551
Transistor Type :
NPN
Lead Free :
Lead Free
Frequency :
300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA 5V
Factory Lead Time :
19 Weeks
Number of Pins :
3
Emitter Base Voltage (VEBO) :
6V
Height :
1mm
hFE Min :
80
Length :
2.2mm
Max Breakdown Voltage :
160V
Collector Emitter Voltage (VCEO) :
160V
Gain Bandwidth Product :
300MHz
Vce Saturation (Max) @ Ib, Ic :
200mV @ 5mA, 50mA
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
160V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
200mW
Current - Collector Cutoff (Max) :
50nA ICBO
Max Power Dissipation :
200mW
Datasheets
MMST5551
Introducing Transistors - Bipolar (BJT) - Single YANGJIE MMST5551 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SC-70, SOT-323, Operating Temperature:-55°C~150°C TJ, Base Part Number:MMST5551, Number of Pins:3, MMST5551 pinout, MMST5551 datasheet PDF, MMST5551 amp .Beyond Transistors - Bipolar (BJT) - Single YANGJIE MMST5551 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -55°C~150°C TJ 50nA ICBO 1 Elements SC-70, SOT-323 Tape & Reel (TR) Surface Mount

MMST5551-7-F Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 160V volts.This product comes in a SOT-323 device package from the supplier.Device displays Collector Emitter Breakdown (160V maximal voltage).Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

MMST5551-7-F Features


the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
the supplier device package of SOT-323


MMST5551-7-F Applications


There are a lot of Diodes Incorporated
MMST5551-7-F applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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