MMST4124-7
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- Mfr.Part #
- MMST4124-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.2A SC70-3
- Stock
- 60,181
- In Stock ：
- 60,181
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 25V
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 25V
- Gain Bandwidth Product :
- 300MHz
- Lead Free :
- Lead Free
- Transition Frequency :
- 300MHz
- hFE Min :
- 120
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Width :
- 1.35mm
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Collector Current :
- 200mA
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 25V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Base Part Number :
- MMST4124
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Saturation Voltage :
- 300mV
- Published :
- 2008
- Weight :
- 6.010099mg
- Element Configuration :
- Single
- Length :
- 2.2mm
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Max Breakdown Voltage :
- 25V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 200mA
- Height :
- 1mm
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 200mA
- Max Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Datasheets
- MMST4124-7
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMST4124-7-F Overview
In this device, the DC current gain is 120 @ 2mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.A 200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMST4124-7-F Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 300MHz
MMST4124-7-F Applications
There are a lot of Diodes Incorporated
MMST4124-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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