MMBTA55LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

4V

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Current Rating :

-500mA

Published :

2005

Transition Frequency :

50MHz

Collector Base Voltage (VCBO) :

60V

Max Collector Current :

500mA

Number of Elements :

1

Type :

GENERAL PURPOSE

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

-250mV

Transistor Type :

PNP

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Max Power Dissipation :

225mW

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Base Part Number :

MMBTA55

Element Configuration :

Single

Frequency :

50MHz

Height :

1.01mm

Voltage - Rated DC :

-60V

Width :

1.4mm

Mounting Type :

Surface Mount

Terminal Position :

Dual

Power Dissipation :

300mW

Lead Free :

Lead Free

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

60V

Package / Case :

TO-236-3, SC-59, SOT-23-3

hFE Min :

100

Time@Peak Reflow Temperature-Max (s) :

40

Power - Max :

225mW

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Gain Bandwidth Product :

50MHz

Length :

3.04mm

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing