MMBTA43LT1G
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- Mfr.Part #
- MMBTA43LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.05A SOT23-3
- Stock
- 28,363
- In Stock ：
- 28,363
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- hFE Min :
- 25
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 225mW
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 200V
- Collector Emitter Breakdown Voltage :
- 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Collector Emitter Saturation Voltage :
- 500mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 21 hours ago)
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 500mV
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 50MHz
- Mount :
- Surface Mount
- Transition Frequency :
- 50MHz
- JESD-609 Code :
- e3
- Current Rating :
- 500mA
- Max Collector Current :
- 50mA
- Collector Base Voltage (VCBO) :
- 200V
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.95
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 50mA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Datasheets
- MMBTA43LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA43LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
MMBTA43LT1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA43LT1G Applications
There are a lot of ON Semiconductor
MMBTA43LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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