MMBTA06-7
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- Mfr.Part #
- MMBTA06-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 40,987
- In Stock ：
- 40,987
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 3.05mm
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 250mV
- Polarity/Channel Type :
- NPN
- Frequency :
- 100MHz
- Additional Feature :
- High Reliability
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Base Part Number :
- MMBTA06
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Current Rating :
- 500mA
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 15 Weeks
- Continuous Collector Current :
- 500mA
- Number of Elements :
- 1
- Published :
- 2009
- Max Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Max Junction Temperature (Tj) :
- 150°C
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.4mm
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Termination :
- SMD/SMT
- Power Dissipation :
- 310mW
- Height :
- 1.1mm
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 100
- Datasheets
- MMBTA06-7
MMBTA06-7 Documents
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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