MMBTA06-7
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- Mfr.Part #
- MMBTA06-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 40,987
- In Stock ：
- 40,987
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 500mA
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Base Part Number :
- MMBTA06
- Max Junction Temperature (Tj) :
- 150°C
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 80V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- 500mA
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 250mV
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Length :
- 3.05mm
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 4V
- Power Dissipation :
- 310mW
- Max Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- hFE Min :
- 100
- Termination :
- SMD/SMT
- Series :
- Automotive, AEC-Q101
- Additional Feature :
- High Reliability
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 1.1mm
- Datasheets
- MMBTA06-7
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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