MMBT5551LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Max Breakdown Voltage :

160V

Length :

3.04mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Current - Collector Cutoff (Max) :

100nA

Height :

1.11mm

JESD-609 Code :

e3

Pbfree Code :

yes

Width :

2.64mm

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

6V

Published :

2007

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Number of Pins :

3

Voltage - Rated DC :

160V

Operating Temperature :

-55°C~150°C TJ

Current Rating :

600mA

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

180V

Number of Elements :

1

Factory Lead Time :

4 Weeks

Power Dissipation :

300mW

VCEsat-Max :

0.2 V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

80

Max Power Dissipation :

225mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Number of Terminations :

3

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

150mV

Base Part Number :

MMBT5551

Lead Free :

Lead Free

Terminal Form :

Gull wing

Max Collector Current :

600mA

Pin Count :

3

Collector Emitter Voltage (VCEO) :

160V

Collector Emitter Breakdown Voltage :

160V