MMBT5551LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Saturation Voltage :

150mV

Current - Collector Cutoff (Max) :

100nA

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Length :

3.04mm

Collector Emitter Voltage (VCEO) :

160V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

VCEsat-Max :

0.2 V

Current Rating :

600mA

Factory Lead Time :

4 Weeks

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Published :

2007

Power Dissipation :

300mW

Transistor Type :

NPN

Transistor Application :

SWITCHING

Width :

2.64mm

Max Collector Current :

600mA

Element Configuration :

Single

Surface Mount :

yes

Max Power Dissipation :

225mW

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Breakdown Voltage :

160V

Max Breakdown Voltage :

160V

Number of Terminations :

3

Base Part Number :

MMBT5551

Voltage - Rated DC :

160V

Mounting Type :

Surface Mount

Pin Count :

3

Height :

1.11mm

Collector Base Voltage (VCBO) :

180V

JESD-609 Code :

e3

hFE Min :

80

Polarity/Channel Type :

N-Channel