MMBT5087

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Elements :

1

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

6 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Power Dissipation :

350mW

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Frequency :

40MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Element Configuration :

Single

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

-50V

Width :

6.35mm

Radiation Hardening :

No

hFE Min :

250

Collector Emitter Saturation Voltage :

-300mV

Current Rating :

-100mA

Voltage - Rated DC :

-50V

Transition Frequency :

40MHz

Max Breakdown Voltage :

50V

Length :

6.35mm

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100μA 5V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Height :

6.35mm

Polarity/Channel Type :

PNP

Number of Terminations :

3

Weight :

30mg

RoHS Status :

RoHS Compliant

Base Part Number :

MMBT5087

Number of Pins :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

350mW

Current - Collector Cutoff (Max) :

10nA

ECCN Code :

EAR99

Mount :

Surface Mount

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

-3V

Transistor Type :

PNP

Max Collector Current :

100mA

Gain Bandwidth Product :

40MHz