MMBT3906LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

-5V

Collector Emitter Voltage (VCEO) :

-40V

hFE Min :

30

Mounting Type :

Surface Mount

Pin Count :

3

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Transistor Type :

PNP

Base Part Number :

MMBT3906

Height :

1.11mm

ECCN Code :

EAR99

Length :

2.9mm

Power Dissipation :

225mW

Transistor Element Material :

SILICON

Number of Pins :

3

Contact Plating :

Tin

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Collector Emitter Saturation Voltage :

-250mV

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

Radiation Hardening :

No

Turn On Time-Max (ton) :

70ns

Operating Temperature :

-55°C~150°C TJ

Current Rating :

-200mA

VCEsat-Max :

0.4 V

JESD-609 Code :

e3

Surface Mount :

yes

Terminal Form :

Gull wing

Number of Terminations :

3

Published :

2004

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Current - Collector (Ic) (Max) :

200mA

Width :

1.3mm

Packaging :

Tape and Reel (TR)

Max Collector Current :

-200mA

Frequency :

250MHz

Terminal Position :

Dual

Max Breakdown Voltage :

40V

Voltage - Rated DC :

-40V

REACH SVHC :

No SVHC

Transition Frequency :

250MHz

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

-40V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Gain Bandwidth Product :

250MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Junction Temperature (Tj) :

150°C

Collector-Base Capacitance-Max :

4.5pF

Collector Base Voltage (VCBO) :

-40V