MMBT3906
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- Mfr.Part #
- MMBT3906
- Manufacturer
- HY Electronic (Cayman) Limited
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- Small Signal Transistor
- Stock
- 17,855
- In Stock ：
- 17,855
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- Manufacturer :
- HY Electronic (Cayman) Limited
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 40V
- Transition Frequency :
- 300MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Mount :
- Surface Mount
- Max Collector Current :
- 200mA
- Weight :
- 200.998119mg
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn Off Time-Max (toff) :
- 300ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 10 Weeks
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2001
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Collector Current :
- -200mA
- Frequency - Transition :
- 300MHz
- Element Configuration :
- Single
- Power - Max :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- JESD-30 Code :
- R-PDSO-G3
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Voltage (VCEO) :
- 400mV
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Turn On Time-Max (ton) :
- 70ns
- Datasheets
- MMBT3906
-Limited/MFG_SOT-23-png.jpg)
PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906-G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906-G Applications
There are a lot of Comchip Technology
MMBT3906-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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