MJW1302AG
- Mfr.Part #
- MJW1302AG
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP 230V 15A TO247-3
- Stock
- 22,149
- In Stock :
- 22,149
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 10 Weeks
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1A, 10A
- JEDEC-95 Code :
- TO-247AD
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Base Voltage (VCBO) :
- 230V
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 6.35mm
- Gain Bandwidth Product :
- 30MHz
- Lead Free :
- Lead Free
- Frequency :
- 30MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 7A 5V
- Number of Pins :
- 3
- Published :
- 2001
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-247-3
- Collector Emitter Saturation Voltage :
- 400mV
- Transition Frequency :
- 30MHz
- Pin Count :
- 3
- Surface Mount :
- No
- Max Collector Current :
- 15A
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 230V
- Collector Emitter Breakdown Voltage :
- 230V
- Current Rating :
- -15A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 50
- Power Dissipation :
- 200W
- Weight :
- 4.535924g
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Voltage - Rated DC :
- -230V
- Length :
- 6.35mm
- Max Power Dissipation :
- 200W
- Width :
- 6.35mm
- Datasheets
- MJW1302AG

PNP -65°C~150°C TJ 50μA ICBO 1 Elements 3 Terminations SILICON PNP TO-247-3 Tube Through Hole
MJW1302AG Overview
In this device, the DC current gain is 50 @ 7A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 1A, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-15A).30MHz is present in the transition frequency.Maximum collector currents can be below 15A volts.
MJW1302AG Features
the DC current gain for this device is 50 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
MJW1302AG Applications
There are a lot of ON Semiconductor
MJW1302AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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