MJW1302AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Height :

6.35mm

REACH SVHC :

No SVHC

Length :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

230V

Power Dissipation :

200W

Pin Count :

3

Number of Terminations :

3

Published :

2001

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

2V @ 1A, 10A

Element Configuration :

Single

Current Rating :

-15A

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

30MHz

Transition Frequency :

30MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 7A 5V

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

400mV

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

JEDEC-95 Code :

TO-247AD

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Case Connection :

COLLECTOR

Voltage - Rated DC :

-230V

hFE Min :

50

Number of Pins :

3

Max Power Dissipation :

200W

Collector Emitter Breakdown Voltage :

230V

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

230V

Max Collector Current :

15A

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Transistor Type :

PNP

Factory Lead Time :

10 Weeks

Surface Mount :

No

Current - Collector Cutoff (Max) :

50μA ICBO

Width :

6.35mm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Frequency :

30MHz