MJW1302A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AD

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

230V

Vce Saturation (Max) @ Ib, Ic :

2V @ 1A, 10A

REACH SVHC :

No SVHC

Transistor Type :

PNP

hFE Min :

50

Length :

6.35mm

Pbfree Code :

yes

Element Configuration :

Single

Published :

2001

Current Rating :

-15A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

400mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 7A 5V

Package / Case :

TO-247-3

Gain Bandwidth Product :

30MHz

Factory Lead Time :

10 Weeks

Transition Frequency :

30MHz

Polarity/Channel Type :

PNP

Transistor Application :

AMPLIFIER

Packaging :

Tube

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

Number of Elements :

1

Power Dissipation :

200W

Collector Emitter Breakdown Voltage :

230V

Frequency :

30MHz

Width :

6.35mm

Weight :

4.535924g

Height :

6.35mm

Max Power Dissipation :

200W

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Mounting Type :

Through Hole

JESD-609 Code :

e3

Max Collector Current :

15A

Collector Base Voltage (VCBO) :

230V

Voltage - Rated DC :

-230V

Current - Collector Cutoff (Max) :

50μA ICBO

Number of Terminations :

3

Transistor Element Material :

SILICON