MJW1302A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

230V

Terminal Finish :

Tin (Sn)

Operating Temperature :

-65°C~150°C TJ

Weight :

4.535924g

Surface Mount :

No

Height :

6.35mm

Collector Emitter Breakdown Voltage :

230V

Number of Terminations :

3

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

230V

hFE Min :

50

Max Power Dissipation :

200W

Collector Emitter Saturation Voltage :

400mV

Transition Frequency :

30MHz

Transistor Application :

AMPLIFIER

Number of Pins :

3

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Frequency :

30MHz

Factory Lead Time :

10 Weeks

Current Rating :

-15A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gain Bandwidth Product :

30MHz

Vce Saturation (Max) @ Ib, Ic :

2V @ 1A, 10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

ECCN Code :

EAR99

Pin Count :

3

Published :

2001

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 7A 5V

Length :

6.35mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Power Dissipation :

200W

Current - Collector Cutoff (Max) :

50μA ICBO

Transistor Type :

PNP

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

JEDEC-95 Code :

TO-247AD

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

15A

Package / Case :

TO-247-3

Element Configuration :

Single

Mounting Type :

Through Hole

Width :

6.35mm

Voltage - Rated DC :

-230V

Radiation Hardening :

No

Case Connection :

COLLECTOR