MJL4302A
- Mfr.Part #
- MJL4302A
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS PNP 350V 15A TO264
- Stock
- 42,596
- In Stock :
- 42,596
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 800mA, 8A
- Voltage - Rated DC :
- -350V
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 230W
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e0
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 350V
- Number of Terminations :
- 3
- hFE Min :
- 80
- Max Collector Current :
- 15A
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1V
- Package / Case :
- TO-264-3, TO-264AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5A 5V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Lead Free :
- Contains Lead
- Transition Frequency :
- 35MHz
- Element Configuration :
- Single
- Frequency :
- 35MHz
- Collector Emitter Voltage (VCEO) :
- 350V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2006
- Power Dissipation :
- 230W
- Gain Bandwidth Product :
- 35MHz
- Peak Reflow Temperature (Cel) :
- 240
- Collector Base Voltage (VCBO) :
- 350V
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Current Rating :
- -15A
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Datasheets
- MJL4302A

PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-264-3, TO-264AA Tube Through Hole
MJL4302A Overview
In this device, the DC current gain is 80 @ 5A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 35MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
MJL4302A Features
the DC current gain for this device is 80 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 35MHz
MJL4302A Applications
There are a lot of ON Semiconductor
MJL4302A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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