MJL4302AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

80

Transistor Type :

PNP

Surface Mount :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

1V @ 800mA, 8A

Packaging :

Tube

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

350V

Element Configuration :

Single

Pin Count :

3

Transistor Application :

AMPLIFIER

Published :

2005

Frequency :

35MHz

Current Rating :

-15A

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pbfree Code :

yes

Transistor Element Material :

SILICON

Length :

20.3mm

Voltage - Rated DC :

-350V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5A 5V

Width :

5.3mm

Current - Collector Cutoff (Max) :

100μA

Height :

26.4mm

Collector Emitter Saturation Voltage :

1V

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Breakdown Voltage :

350V

Transition Frequency :

35MHz

Mounting Type :

Through Hole

Power Dissipation :

230W

Gain Bandwidth Product :

35MHz

Package / Case :

TO-264-3, TO-264AA

Factory Lead Time :

16 Weeks

Collector Base Voltage (VCBO) :

350V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

15A

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Number of Elements :

1

Max Power Dissipation :

230W

Polarity/Channel Type :

PNP

Number of Pins :

3

ECCN Code :

EAR99