MJH6284G

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Mfr.Part #
MJH6284G
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN DARL 100V 20A TO247-3
Stock
6,783
In Stock :
6,783

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Operating Temperature :
-65°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Frequency - Transition :
4MHz
Collector Base Voltage (VCBO) :
100V
Published :
2002
Surface Mount :
No
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Transistor Type :
NPN - Darlington
Package / Case :
TO-247-3
Max Collector Current :
20A
Collector Emitter Breakdown Voltage :
100V
Continuous Collector Current :
20A
Pin Count :
3
Emitter Base Voltage (VEBO) :
5V
ECCN Code :
EAR99
Current Rating :
20A
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Power Dissipation :
160W
Voltage - Rated DC :
100V
Collector Emitter Saturation Voltage :
2V
Number of Terminations :
3
Case Connection :
COLLECTOR
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
100V
Max Power Dissipation :
160W
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Polarity :
NPN
Transition Frequency :
4MHz
Number of Pins :
3
Width :
5.3mm
Factory Lead Time :
8 Weeks
Packaging :
Tube
Current - Collector Cutoff (Max) :
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 10A 3V
Collector-Base Capacitance-Max :
400pF
Number of Elements :
1
Element Configuration :
Single
Weight :
4.535924g
Length :
16.26mm
Transistor Application :
AMPLIFIER
Height :
21.08mm
Vce Saturation (Max) @ Ib, Ic :
3V @ 200mA, 20A
VCEsat-Max :
3 V
Introducing Transistors - Bipolar (BJT) - Single onsemi MJH6284G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, MJH6284G pinout, MJH6284G datasheet PDF, MJH6284G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJH6284G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJH6284G


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

MJH6284G Overview


In this device, the DC current gain is 750 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 200mA, 20A.A 20A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 20A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 20A volts at Single BJT transistors maximum.

MJH6284G Features


the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is 20A
a transition frequency of 4MHz


MJH6284G Applications


There are a lot of ON Semiconductor
MJH6284G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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