MJH6284
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- Mfr.Part #
- MJH6284
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 20A SOT93
- Stock
- 10,505
- In Stock ：
- 10,505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -65°C~150°C TJ
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 20A
- Collector Emitter Voltage (VCEO) :
- 100V
- Published :
- 2002
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1mA
- VCEsat-Max :
- 3 V
- Pin Count :
- 3
- Max Collector Current :
- 20A
- Max Power Dissipation :
- 160W
- Frequency - Transition :
- 4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 10A 3V
- Collector-Base Capacitance-Max :
- 400pF
- Length :
- 16.26mm
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Terminal Finish :
- Tin (Sn)
- Width :
- 5.3mm
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tube
- Voltage - Rated DC :
- 100V
- Polarity :
- NPN
- Collector Emitter Saturation Voltage :
- 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 4MHz
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Number of Pins :
- 3
- Current Rating :
- 20A
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Height :
- 21.08mm
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 100V
- Power Dissipation :
- 160W
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Datasheets
- MJH6284
NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
MJH6284G Overview
In this device, the DC current gain is 750 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 200mA, 20A.A 20A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 20A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 20A volts at Single BJT transistors maximum.
MJH6284G Features
the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is 20A
a transition frequency of 4MHz
MJH6284G Applications
There are a lot of ON Semiconductor
MJH6284G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MJH6284G | onsemi | 6,783 | TRANS NPN DARL 100V 20A TO247-3 |
| MJH6287 | onsemi | 3,291 | TRANS PNP DARL 100V 20A SOT93 |
| MJH6287G | onsemi | 1,876 | TRANS PNP DARL 100V 20A TO247-3 |
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