MJE4353G

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Mfr.Part #
MJE4353G
Manufacturer
onsemi
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS PNP 160V 16A SOT93
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Case Connection :
COLLECTOR
Package / Case :
TO-218-3
hFE Min :
15
Voltage - Rated DC :
-160V
Vce Saturation (Max) @ Ib, Ic :
3.5V @ 2A, 16A
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Pbfree Code :
yes
Polarity/Channel Type :
PNP
Pin Count :
3
Number of Terminations :
3
Packaging :
Tube
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
16A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~150°C TJ
Transition Frequency :
1MHz
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Max Power Dissipation :
125W
JESD-609 Code :
e3
Published :
2006
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 8A 2V
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
Power Dissipation :
125W
Frequency :
1MHz
Current Rating :
-16A
REACH SVHC :
No SVHC
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
160V
Gain Bandwidth Product :
1MHz
Emitter Base Voltage (VEBO) :
7V
Collector Emitter Voltage (VCEO) :
160V
ECCN Code :
EAR99
Number of Pins :
3
Current - Collector Cutoff (Max) :
750µA
Collector Base Voltage (VCBO) :
160V
Element Configuration :
Single
Transistor Type :
PNP
Collector Emitter Saturation Voltage :
3.5V
Datasheets
MJE4353G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE4353G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-218-3, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, MJE4353G pinout, MJE4353G datasheet PDF, MJE4353G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE4353G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE4353G


PNP -65°C~150°C TJ 750μA 1 Elements 3 Terminations SILICON PNP TO-218-3 Tube Through Hole

MJE4353G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 8A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 3.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3.5V @ 2A, 16A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -16A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 1MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.

MJE4353G Features


the DC current gain for this device is 15 @ 8A 2V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 2A, 16A
the emitter base voltage is kept at 7V
the current rating of this device is -16A
a transition frequency of 1MHz


MJE4353G Applications


There are a lot of ON Semiconductor
MJE4353G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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