MJE4353G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Frequency :

1MHz

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

7V

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

160V

Power Dissipation :

125W

Current - Collector Cutoff (Max) :

750µA

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Number of Terminations :

3

Gain Bandwidth Product :

1MHz

Collector Emitter Breakdown Voltage :

160V

Operating Temperature :

-65°C~150°C TJ

Transistor Type :

PNP

Mount :

Through Hole

Mounting Type :

Through Hole

Published :

2006

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

160V

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 2A, 16A

Current Rating :

-16A

Packaging :

Tube

Collector Emitter Saturation Voltage :

3.5V

Voltage - Rated DC :

-160V

Number of Elements :

1

hFE Min :

15

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Pin Count :

3

Package / Case :

TO-218-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 8A 2V

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

16A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Transition Frequency :

1MHz

Max Power Dissipation :

125W

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

260