MJE4343G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 8A 2V

Mounting Type :

Through Hole

Transition Frequency :

1MHz

Height :

16.2mm

Voltage - Rated DC :

160V

Power Dissipation :

125W

Element Configuration :

Single

Transistor Type :

NPN

Number of Elements :

1

hFE Min :

15

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Number of Pins :

3

Packaging :

Tube

Collector Emitter Breakdown Voltage :

160V

Max Power Dissipation :

125W

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Published :

2002

Transistor Element Material :

SILICON

Pin Count :

3

Surface Mount :

No

Collector Emitter Saturation Voltage :

3.5V

Length :

15.2mm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Frequency :

1MHz

Package / Case :

TO-247-3

Width :

4.9mm

Max Collector Current :

16A

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

7V

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

160V

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 2A, 16A

Gain Bandwidth Product :

1MHz

JESD-609 Code :

e3

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Weight :

4.535924g

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

160V

Factory Lead Time :

2 Weeks

Number of Terminations :

3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Current Rating :

16A

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

750µA

Contact Plating :

Tin