MJE4343G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Frequency :

1MHz

Polarity/Channel Type :

NPN

hFE Min :

15

Current Rating :

16A

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

3.5V

Collector Base Voltage (VCBO) :

160V

Height :

16.2mm

Weight :

4.535924g

Transition Frequency :

1MHz

Power Dissipation :

125W

Packaging :

Tube

Element Configuration :

Single

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 2A, 16A

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Published :

2002

Collector Emitter Breakdown Voltage :

160V

Width :

4.9mm

Collector Emitter Voltage (VCEO) :

160V

Emitter Base Voltage (VEBO) :

7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

2 Weeks

Contact Plating :

Tin

Number of Elements :

1

Transistor Type :

NPN

Max Collector Current :

16A

Current - Collector Cutoff (Max) :

750µA

Operating Temperature :

-65°C~150°C TJ

Gain Bandwidth Product :

1MHz

Length :

15.2mm

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 8A 2V

Number of Terminations :

3

Number of Pins :

3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Surface Mount :

No

Max Power Dissipation :

125W

Voltage - Rated DC :

160V

Package / Case :

TO-247-3

Case Connection :

COLLECTOR

Pbfree Code :

yes