MJE182G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

11.0998mm

Transistor Element Material :

SILICON

Pin Count :

3

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

50MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

7V

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

80V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

12.5W

Surface Mount :

No

Number of Elements :

1

Element Configuration :

Single

Frequency :

50MHz

Current Rating :

3A

Max Collector Current :

3A

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

JESD-609 Code :

e3

hFE Min :

50

Width :

2.9972mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Packaging :

Bulk

ECCN Code :

EAR99

Number of Terminations :

3

Collector Base Voltage (VCBO) :

100V

Power Dissipation :

12.5W

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-65°C~150°C TJ

REACH SVHC :

No SVHC

Length :

7.7978mm

Transition Frequency :

50MHz

Transistor Application :

SWITCHING

Base Part Number :

MJE182

Number of Pins :

3

Collector Emitter Breakdown Voltage :

80V

Contact Plating :

Tin

Polarity/Channel Type :

NPN

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

80V

Current - Collector Cutoff (Max) :

100nA ICBO

Weight :

4.535924g

Published :

2006

Power - Max :

1.5W

Package / Case :

TO-225AA, TO-126-3

Collector Emitter Saturation Voltage :

1.7V

Transistor Type :

NPN