MJE182G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Emitter Base Voltage (VEBO) :

7V

Radiation Hardening :

No

hFE Min :

50

Number of Pins :

3

Base Part Number :

MJE182

Collector Base Voltage (VCBO) :

100V

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Polarity/Channel Type :

NPN

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transition Frequency :

50MHz

Length :

7.7978mm

Lead Free :

Lead Free

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Current Rating :

3A

Pbfree Code :

yes

Packaging :

Bulk

Power - Max :

1.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

12.5W

Voltage - Rated DC :

80V

Width :

2.9972mm

Mounting Type :

Through Hole

Max Power Dissipation :

12.5W

Element Configuration :

Single

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

10 Weeks

Collector Emitter Voltage (VCEO) :

80V

Transistor Element Material :

SILICON

Frequency :

50MHz

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e3

Number of Terminations :

3

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

1.7V

Surface Mount :

No

Max Collector Current :

3A

Weight :

4.535924g

Height :

11.0998mm

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Transistor Application :

SWITCHING

Published :

2006

ECCN Code :

EAR99

Gain Bandwidth Product :

50MHz

Package / Case :

TO-225AA, TO-126-3

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA ICBO