MJE13003G
- Mfr.Part #
- MJE13003G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126
- Stock
- 2,839
- In Stock :
- 2,839
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 10MHz
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 400V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Max Collector Current :
- 1.5A
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 400V
- Operating Temperature :
- -65°C~150°C TJ
- Current Rating :
- 1.5A
- Gain Bandwidth Product :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 500mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Packaging :
- Bulk
- hFE Min :
- 8
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Transition Frequency :
- 10MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Saturation Voltage :
- 500mV
- Power Dissipation :
- 1.4W
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1.4W
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Published :
- 2006
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Series :
- SWITCHMODE™
- Datasheets
- MJE13003G
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NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE13003G Overview
In this device, the DC current gain is 8 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 500mA, 1.5A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
MJE13003G Features
the DC current gain for this device is 8 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 10MHz
MJE13003G Applications
There are a lot of ON Semiconductor
MJE13003G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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