MJE13003G
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- Mfr.Part #
- MJE13003G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126
- Stock
- 2,839
- In Stock ：
- 2,839
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Frequency :
- 10MHz
- Gain Bandwidth Product :
- 3MHz
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- SWITCHMODE™
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1.4W
- Pin Count :
- 3
- Voltage - Rated DC :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 500mA 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1.4W
- Element Configuration :
- Single
- Transition Frequency :
- 10MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Max Collector Current :
- 1.5A
- Collector Base Voltage (VCBO) :
- 100V
- Current Rating :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 400V
- Mount :
- Through Hole
- Published :
- 2006
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- hFE Min :
- 8
- Collector Emitter Voltage (VCEO) :
- 400V
- Terminal Finish :
- Tin (Sn)
- Datasheets
- MJE13003G
MJE13003G Documents
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NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE13003G Overview
In this device, the DC current gain is 8 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 500mA, 1.5A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
MJE13003G Features
the DC current gain for this device is 8 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 10MHz
MJE13003G Applications
There are a lot of ON Semiconductor
MJE13003G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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