MJE13003G

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Mfr.Part #
MJE13003G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 400V 1.5A TO126
Stock
2,839
In Stock :
2,839

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency :
10MHz
RoHS Status :
RoHS Compliant
ECCN Code :
EAR99
Package / Case :
TO-225AA, TO-126-3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
400V
Transistor Application :
SWITCHING
Pin Count :
3
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Max Collector Current :
1.5A
Number of Elements :
1
Mounting Type :
Through Hole
Voltage - Rated DC :
400V
Operating Temperature :
-65°C~150°C TJ
Current Rating :
1.5A
Gain Bandwidth Product :
3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 500mA 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Packaging :
Bulk
hFE Min :
8
Polarity/Channel Type :
NPN
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
3V @ 500mA, 1.5A
Transition Frequency :
10MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Qualification Status :
Not Qualified
Number of Terminations :
3
Collector Base Voltage (VCBO) :
100V
Collector Emitter Saturation Voltage :
500mV
Power Dissipation :
1.4W
REACH SVHC :
No SVHC
Mount :
Through Hole
Lead Free :
Lead Free
Max Power Dissipation :
1.4W
Collector Emitter Breakdown Voltage :
400V
Number of Pins :
3
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Published :
2006
Element Configuration :
Single
Terminal Finish :
Tin (Sn)
Series :
SWITCHMODE™
Datasheets
MJE13003G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE13003G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Number of Pins:3, MJE13003G pinout, MJE13003G datasheet PDF, MJE13003G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE13003G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE13003G


NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

MJE13003G Overview


In this device, the DC current gain is 8 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 500mA, 1.5A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

MJE13003G Features


the DC current gain for this device is 8 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 10MHz


MJE13003G Applications


There are a lot of ON Semiconductor
MJE13003G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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