MJE13003G
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- Mfr.Part #
- MJE13003G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126
- Stock
- 2,839
- In Stock ：
- 2,839
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 400V
- Gain Bandwidth Product :
- 3MHz
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2006
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Series :
- SWITCHMODE™
- Max Collector Current :
- 1.5A
- Current Rating :
- 1.5A
- Frequency :
- 10MHz
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 500mA 2V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 400V
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 10MHz
- hFE Min :
- 8
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.4W
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Package / Case :
- TO-225AA, TO-126-3
- Max Power Dissipation :
- 1.4W
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Transistor Type :
- NPN
- Datasheets
- MJE13003G
MJE13003G Documents
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NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE13003G Overview
In this device, the DC current gain is 8 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 500mA, 1.5A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
MJE13003G Features
the DC current gain for this device is 8 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 10MHz
MJE13003G Applications
There are a lot of ON Semiconductor
MJE13003G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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