MJE182

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

100V

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Emitter Base Voltage (VEBO) :

7V

Collector Emitter Breakdown Voltage :

80V

Transistor Type :

NPN

Gain Bandwidth Product :

50MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

50MHz

Pin Count :

3

Voltage - Rated DC :

100V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Packaging :

Tube

Package / Case :

TO-225AA, TO-126-3

Mounting Type :

Through Hole

Radiation Hardening :

No

Base Part Number :

MJE182

Max Collector Current :

3A

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

80V

Weight :

4.535924g

Mount :

Through Hole

Number of Pins :

3

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

Case Connection :

Isolated

Terminal Finish :

Matte Tin (Sn)

Height :

11.05mm

Collector-Base Capacitance-Max :

40pF

Number of Elements :

1

Transistor Application :

SWITCHING

Length :

7.8mm

Collector Emitter Saturation Voltage :

1.7V

Number of Terminations :

3

Operating Temperature :

150°C TJ

Power Dissipation :

12.5W

Width :

2.9mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Frequency :

50MHz

RoHS Status :

ROHS3 Compliant

hFE Min :

50

Current Rating :

3A

Pbfree Code :

yes

Max Power Dissipation :

12.5W