MJE181STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

50MHz

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

7V

Length :

8mm

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Height :

11mm

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1.7V

Frequency :

50MHz

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

60V

Current - Collector Cutoff (Max) :

100μA ICBO

Current Rating :

3A

hFE Min :

50

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gain Bandwidth Product :

50MHz

Weight :

761mg

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

1.5W

Width :

3.25mm

Radiation Hardening :

No

Power Dissipation :

1.5W

Factory Lead Time :

2 Weeks

Mounting Type :

Through Hole

Packaging :

Tube

JESD-609 Code :

e3

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

80V

Element Configuration :

Single

Package / Case :

TO-225AA, TO-126-3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Max Collector Current :

3A

Mount :

Through Hole

Base Part Number :

MJE181

Published :

2001

Number of Terminations :

3

Voltage - Rated DC :

60V