MJE181G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

60V

Weight :

4.535924g

Pbfree Code :

yes

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

80V

Frequency :

50MHz

Height :

11.0998mm

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Published :

2000

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Max Collector Current :

3A

Length :

7.7978mm

JESD-609 Code :

e3

Gain Bandwidth Product :

50MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

hFE Min :

50

Element Configuration :

Single

Transistor Element Material :

SILICON

Power Dissipation :

12.5W

Factory Lead Time :

4 Weeks

Base Part Number :

MJE181

Number of Terminations :

3

Number of Pins :

3

Current Rating :

3A

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

7V

Operating Temperature :

-65°C~150°C TJ

Package / Case :

TO-225AA, TO-126-3

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Width :

2.9972mm

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

60V

Surface Mount :

No

Collector Emitter Saturation Voltage :

1.7V

Transition Frequency :

50MHz

Pin Count :

3

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

Voltage - Rated DC :

60V

Packaging :

Bulk

Max Power Dissipation :

1.5W

RoHS Status :

ROHS3 Compliant