MJE180STU
- Mfr.Part #
- MJE180STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A TO126-3
- Stock
- 1,677
- In Stock :
- 1,677
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- hFE Min :
- 50
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.5W
- Base Part Number :
- MJE180
- Width :
- 3.25mm
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 40V
- Published :
- 2001
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Height :
- 11mm
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Emitter Saturation Voltage :
- 1.7V
- Terminal Finish :
- Tin (Sn)
- Length :
- 8mm
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 40V
- Power Dissipation :
- 1.5W
- Gain Bandwidth Product :
- 50MHz
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Weight :
- 761mg
- Frequency :
- 50MHz
- Pbfree Code :
- yes
- Transition Frequency :
- 50MHz
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Current Rating :
- 3A
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Tube
- Datasheets
- MJE180STU

NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
MJE180STU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 1V.The collector emitter saturation voltage is 1.7V, which allows for maximum design flexibility.When VCE saturation is 1.7V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 50MHz.A maximum collector current of 3A volts can be achieved.
MJE180STU Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE180STU Applications
There are a lot of ON Semiconductor
MJE180STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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