MJE180STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Gain Bandwidth Product :

50MHz

Power Dissipation :

1.5W

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

40V

Transition Frequency :

50MHz

Collector Base Voltage (VCBO) :

60V

Polarity/Channel Type :

NPN

Max Collector Current :

3A

Current - Collector Cutoff (Max) :

100μA ICBO

ECCN Code :

EAR99

Width :

3.25mm

RoHS Status :

ROHS3 Compliant

Current Rating :

3A

Collector Emitter Voltage (VCEO) :

40V

Collector Emitter Saturation Voltage :

1.7V

Transistor Type :

NPN

JESD-609 Code :

e3

hFE Min :

50

Max Power Dissipation :

1.5W

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Number of Pins :

3

Length :

8mm

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

7V

Package / Case :

TO-225AA, TO-126-3

Height :

11mm

Voltage - Rated DC :

40V

Lead Free :

Lead Free

Packaging :

Tube

Weight :

761mg

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Number of Elements :

1

Frequency :

50MHz

Factory Lead Time :

2 Weeks

Published :

2001

Base Part Number :

MJE180