MJE180STU

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Mfr.Part #
MJE180STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 40V 3A TO126-3
Stock
1,677
In Stock :
1,677

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
3A
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Transistor Type :
NPN
Package / Case :
TO-225AA, TO-126-3
Mounting Type :
Through Hole
JESD-609 Code :
e3
hFE Min :
50
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
1.5W
Base Part Number :
MJE180
Width :
3.25mm
Number of Pins :
3
Factory Lead Time :
2 Weeks
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
40V
Published :
2001
Mount :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.7V @ 600mA, 3A
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Height :
11mm
Current - Collector Cutoff (Max) :
100μA ICBO
Collector Emitter Saturation Voltage :
1.7V
Terminal Finish :
Tin (Sn)
Length :
8mm
Emitter Base Voltage (VEBO) :
7V
Collector Emitter Voltage (VCEO) :
40V
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 100mA 1V
Lead Free :
Lead Free
Voltage - Rated DC :
40V
Power Dissipation :
1.5W
Gain Bandwidth Product :
50MHz
Number of Elements :
1
Number of Terminations :
3
Polarity/Channel Type :
NPN
Transistor Application :
SWITCHING
Weight :
761mg
Frequency :
50MHz
Pbfree Code :
yes
Transition Frequency :
50MHz
Element Configuration :
Single
Radiation Hardening :
No
Current Rating :
3A
Collector Base Voltage (VCBO) :
60V
Packaging :
Tube
Datasheets
MJE180STU
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE180STU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Base Part Number:MJE180, Number of Pins:3, Number of Terminations:3, MJE180STU pinout, MJE180STU datasheet PDF, MJE180STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE180STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE180STU


NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

MJE180STU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 1V.The collector emitter saturation voltage is 1.7V, which allows for maximum design flexibility.When VCE saturation is 1.7V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 50MHz.A maximum collector current of 3A volts can be achieved.

MJE180STU Features


the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz


MJE180STU Applications


There are a lot of ON Semiconductor
MJE180STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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