MJE180PWD

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Mfr.Part #
MJE180PWD
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 40V 3A TO126
Stock
46,965
In Stock :
46,965

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100nA ICBO
Vce Saturation (Max) @ Ib, Ic :
1.7V @ 600mA, 3A
Frequency - Transition :
50MHz
Current - Collector (Ic) (Max) :
3A
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
MJE180
Package / Case :
TO-225AA, TO-126-3
Power - Max :
1.5W
Transistor Type :
NPN
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 100mA 1V
Voltage - Collector Emitter Breakdown (Max) :
40V
Datasheets
MJE180PWD
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE180PWD from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:MJE180, Package / Case:TO-225AA, TO-126-3, MJE180PWD pinout, MJE180PWD datasheet PDF, MJE180PWD amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE180PWD ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE180PWD


NPN 150°C TJ 100nA ICBO TO-225AA, TO-126-3 Bulk Through Hole

MJE180PWD Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 1V.When VCE saturation is 1.7V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).The device has a 40V maximal voltage - Collector Emitter Breakdown.

MJE180PWD Features


the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 1.7V @ 600mA, 3A


MJE180PWD Applications


There are a lot of ON Semiconductor
MJE180PWD applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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