MJE180G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

MJE180

Packaging :

Bulk

Transition Frequency :

50MHz

Collector Emitter Saturation Voltage :

1.7V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Gain Bandwidth Product :

50MHz

Element Configuration :

Single

Package / Case :

TO-225AA, TO-126-3

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

7V

Length :

6.35mm

Transistor Element Material :

SILICON

Surface Mount :

No

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

1.5W

hFE Min :

50

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

12.5W

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Transistor Type :

NPN

Current Rating :

3A

Collector Emitter Voltage (VCEO) :

40V

Number of Pins :

3

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

60V

Weight :

4.535924g

Operating Temperature :

-65°C~150°C TJ

Width :

6.35mm

Peak Reflow Temperature (Cel) :

260

Height :

6.35mm

Max Collector Current :

3A

ECCN Code :

EAR99

Pbfree Code :

yes

Voltage - Rated DC :

40V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2000

Factory Lead Time :

2 Weeks

Frequency :

50MHz

Number of Elements :

1

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Pin Count :

3