MJE18008G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

14 @ 1A 5V

Number of Terminations :

3

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

9V

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2001

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

hFE Min :

14

Surface Mount :

No

Vce Saturation (Max) @ Ib, Ic :

700mV @ 900mA, 4.5V

Collector Emitter Saturation Voltage :

300mV

Collector Emitter Voltage (VCEO) :

450V

Collector Emitter Breakdown Voltage :

450V

Frequency :

13MHz

Current Rating :

8A

Contact Plating :

Tin

Polarity/Channel Type :

NPN

Max Collector Current :

8A

Transistor Element Material :

SILICON

Packaging :

Tube

Mounting Type :

Through Hole

Height :

15.75mm

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100μA

Gain Bandwidth Product :

13MHz

Operating Temperature :

-65°C~150°C TJ

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Transistor Type :

NPN

Voltage - Rated DC :

450V

Number of Elements :

1

Pin Count :

3

Length :

10.28mm

Width :

4.82mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

1kV

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Element Configuration :

Single

Max Power Dissipation :

125W

Series :

SWITCHMODE™

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Transition Frequency :

13MHz