MJE18008

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Mfr.Part #
MJE18008
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 8A TO220
Stock
2,830
In Stock :
2,830

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Height :
15.75mm
Collector Emitter Breakdown Voltage :
450V
Collector Base Voltage (VCBO) :
1kV
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
14 @ 1A 5V
Frequency :
13MHz
Max Collector Current :
8A
Pin Count :
3
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Peak Reflow Temperature (Cel) :
260
hFE Min :
14
Length :
10.28mm
Width :
4.82mm
Max Power Dissipation :
125W
Transition Frequency :
13MHz
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
4 Weeks
Collector Emitter Voltage (VCEO) :
450V
Voltage - Rated DC :
450V
Polarity/Channel Type :
NPN
Number of Elements :
1
Gain Bandwidth Product :
13MHz
Radiation Hardening :
No
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Number of Terminations :
3
Operating Temperature :
-65°C~150°C TJ
Package / Case :
TO-220-3
Case Connection :
COLLECTOR
Surface Mount :
No
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Vce Saturation (Max) @ Ib, Ic :
700mV @ 900mA, 4.5V
Emitter Base Voltage (VEBO) :
9V
Current Rating :
8A
Transistor Element Material :
SILICON
Lead Free :
Lead Free
JEDEC-95 Code :
TO-220AB
Series :
SWITCHMODE™
Collector Emitter Saturation Voltage :
300mV
Contact Plating :
Tin
Element Configuration :
Single
Number of Pins :
3
Transistor Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector Cutoff (Max) :
100μA
ECCN Code :
EAR99
Packaging :
Tube
Published :
2001
JESD-609 Code :
e3
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE18008 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, MJE18008 pinout, MJE18008 datasheet PDF, MJE18008 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE18008 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE18008


NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

MJE18008G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 1A 5V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 13MHz in the part.When collector current reaches its maximum, it can reach 8A volts.

MJE18008G Features


the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz


MJE18008G Applications


There are a lot of ON Semiconductor
MJE18008G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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