MJE18008
- Mfr.Part #
- MJE18008
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 8A TO220
- Stock
- 2,830
- In Stock :
- 2,830
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 9V
- Gain Bandwidth Product :
- 13MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 900mA, 4.5V
- hFE Min :
- 14
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 1A 5V
- Length :
- 10.28mm
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tube
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 450V
- Transition Frequency :
- 13MHz
- Max Power Dissipation :
- 125W
- Contact Plating :
- Tin
- Published :
- 2001
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Current Rating :
- 8A
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 8A
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Breakdown Voltage :
- 450V
- Collector Base Voltage (VCBO) :
- 1kV
- Frequency :
- 13MHz
- Width :
- 4.82mm
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN
- Height :
- 15.75mm
- Series :
- SWITCHMODE™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Collector Emitter Saturation Voltage :
- 300mV
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Voltage - Rated DC :
- 450V
- Datasheets
- MJE18008

NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE18008G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 1A 5V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 13MHz in the part.When collector current reaches its maximum, it can reach 8A volts.
MJE18008G Features
the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz
MJE18008G Applications
There are a lot of ON Semiconductor
MJE18008G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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