MJE18008
- Mfr.Part #
- MJE18008
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 8A TO220
- Stock
- 2,830
- In Stock :
- 2,830
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 15.75mm
- Collector Emitter Breakdown Voltage :
- 450V
- Collector Base Voltage (VCBO) :
- 1kV
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 1A 5V
- Frequency :
- 13MHz
- Max Collector Current :
- 8A
- Pin Count :
- 3
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 14
- Length :
- 10.28mm
- Width :
- 4.82mm
- Max Power Dissipation :
- 125W
- Transition Frequency :
- 13MHz
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 450V
- Voltage - Rated DC :
- 450V
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 13MHz
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-220-3
- Case Connection :
- COLLECTOR
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 900mA, 4.5V
- Emitter Base Voltage (VEBO) :
- 9V
- Current Rating :
- 8A
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Series :
- SWITCHMODE™
- Collector Emitter Saturation Voltage :
- 300mV
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100μA
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Published :
- 2001
- JESD-609 Code :
- e3
- Datasheets
- MJE18008
MJE18008 Documents

NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE18008G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 1A 5V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 13MHz in the part.When collector current reaches its maximum, it can reach 8A volts.
MJE18008G Features
the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz
MJE18008G Applications
There are a lot of ON Semiconductor
MJE18008G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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