MJE18004G

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Mfr.Part #
MJE18004G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 5A TO220
Stock
3,414
In Stock :
3,414

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
9V
Weight :
4.535924g
Published :
2004
Case Connection :
COLLECTOR
DC Current Gain (hFE) (Min) @ Ic, Vce :
14 @ 300mA 5V
Pbfree Code :
yes
Max Collector Current :
5A
Surface Mount :
No
Package / Case :
TO-220-3
Radiation Hardening :
No
Number of Elements :
1
REACH SVHC :
No SVHC
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Through Hole
ECCN Code :
EAR99
Length :
10.28mm
Polarity/Channel Type :
NPN
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
260
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
750mV @ 500mA, 2.5A
Max Power Dissipation :
75W
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
JEDEC-95 Code :
TO-220AB
Voltage - Rated DC :
450V
Number of Terminations :
3
Operating Temperature :
-65°C~150°C TJ
Element Configuration :
Single
Pin Count :
3
Base Part Number :
MJE18004
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Terminal Finish :
Tin (Sn)
Current Rating :
5A
Height :
9.28mm
Collector Emitter Breakdown Voltage :
450V
Collector Emitter Voltage (VCEO) :
450V
JESD-609 Code :
e3
Number of Pins :
3
Gain Bandwidth Product :
13MHz
Series :
SWITCHMODE™
Transistor Type :
NPN
hFE Min :
14
Transition Frequency :
13MHz
Frequency :
13MHz
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
100μA
Power Dissipation :
75W
Collector Base Voltage (VCBO) :
1kV
Collector Emitter Saturation Voltage :
920mV
Width :
4.82mm
Factory Lead Time :
2 Weeks
Datasheets
MJE18004G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE18004G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Base Part Number:MJE18004, Number of Pins:3, MJE18004G pinout, MJE18004G datasheet PDF, MJE18004G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE18004G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE18004G


NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

MJE18004G Overview


This device has a DC current gain of 14 @ 300mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 920mV.A VCE saturation (Max) of 750mV @ 500mA, 2.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 13MHz.A maximum collector current of 5A volts is possible.

MJE18004G Features


the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz


MJE18004G Applications


There are a lot of ON Semiconductor
MJE18004G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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