MJE18004D2G

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Mfr.Part #
MJE18004D2G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 5A TO220
Stock
6,868
In Stock :
6,868

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
750mV @ 400mA, 2A
JEDEC-95 Code :
TO-220AB
Mount :
Through Hole
Base Part Number :
MJE18004
Pbfree Code :
yes
Number of Terminations :
3
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
450V
Max Power Dissipation :
75W
Emitter Base Voltage (VEBO) :
12V
Transistor Element Material :
SILICON
ECCN Code :
EAR99
hFE Min :
15
Number of Elements :
1
Number of Pins :
3
Qualification Status :
Not Qualified
Transition Frequency :
13MHz
Packaging :
Tube
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2006
Case Connection :
COLLECTOR
Gain Bandwidth Product :
13MHz
Collector Base Voltage (VCBO) :
1kV
Collector Emitter Saturation Voltage :
380mV
Current Rating :
5A
Max Collector Current :
5A
Element Configuration :
Single
Lead Free :
Lead Free
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 2A 1V
Operating Temperature :
-65°C~150°C TJ
Current - Collector Cutoff (Max) :
100μA
Terminal Finish :
Tin (Sn)
Voltage - Rated DC :
450V
Mounting Type :
Through Hole
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
750mV
JESD-609 Code :
e3
Additional Feature :
BUILT-IN EFFICIENT ANTISATURATION NETWORK
Package / Case :
TO-220-3
RoHS Status :
RoHS Compliant
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Time@Peak Reflow Temperature-Max (s) :
40
Datasheets
MJE18004D2G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE18004D2G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJE18004, Number of Terminations:3, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, MJE18004D2G pinout, MJE18004D2G datasheet PDF, MJE18004D2G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE18004D2G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE18004D2G


NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

MJE18004D2G Overview


In this device, the DC current gain is 6 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 380mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 400mA, 2A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).13MHz is present in the transition frequency.Maximum collector currents can be below 5A volts.

MJE18004D2G Features


the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 750mV @ 400mA, 2A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 13MHz


MJE18004D2G Applications


There are a lot of ON Semiconductor
MJE18004D2G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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