MJE18004
- Mfr.Part #
- MJE18004
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A TO220
- Stock
- 7,715
- In Stock :
- 7,715
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 450V
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Emitter Base Voltage (VEBO) :
- 9V
- Number of Elements :
- 1
- Frequency :
- 13MHz
- Pbfree Code :
- yes
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 1kV
- REACH SVHC :
- No SVHC
- Height :
- 9.28mm
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MJE18004
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 300mA 5V
- Current Rating :
- 5A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.28mm
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 13MHz
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 5A
- Transistor Type :
- NPN
- Weight :
- 4.535924g
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 500mA, 2.5A
- Collector Emitter Breakdown Voltage :
- 450V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Max Power Dissipation :
- 75W
- Voltage - Rated DC :
- 450V
- Pin Count :
- 3
- Width :
- 4.82mm
- Power Dissipation :
- 75W
- Gain Bandwidth Product :
- 13MHz
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- hFE Min :
- 14
- Series :
- SWITCHMODE™
- Package / Case :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 100μA
- Published :
- 2004
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 920mV
- Datasheets
- MJE18004

NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE18004G Overview
This device has a DC current gain of 14 @ 300mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 920mV.A VCE saturation (Max) of 750mV @ 500mA, 2.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 13MHz.A maximum collector current of 5A volts is possible.
MJE18004G Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz
MJE18004G Applications
There are a lot of ON Semiconductor
MJE18004G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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