MJE172G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

50MHz

Surface Mount :

No

Max Power Dissipation :

1.5W

Published :

2006

Peak Reflow Temperature (Cel) :

260

Transistor Type :

PNP

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Contact Plating :

Tin

Pin Count :

3

Transistor Element Material :

SILICON

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Radiation Hardening :

No

Number of Pins :

3

Weight :

4.535924g

Height :

11.1mm

Element Configuration :

Single

Factory Lead Time :

6 Weeks

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

80V

Power Dissipation :

12.5W

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Package / Case :

TO-225AA, TO-126-3

Collector Emitter Saturation Voltage :

1.7V

Mounting Type :

Through Hole

Number of Terminations :

3

Packaging :

Bulk

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Width :

3mm

Max Collector Current :

3A

Current Rating :

3A

Collector Base Voltage (VCBO) :

100V

ECCN Code :

EAR99

hFE Min :

50

Emitter Base Voltage (VEBO) :

7V

Frequency :

50MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

MJE172

Lead Free :

Lead Free

Gain Bandwidth Product :

50MHz

Length :

7.8mm

Voltage - Rated DC :

-80V

JESD-609 Code :

e3