MJE172G
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- Mfr.Part #
- MJE172G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 138
- In Stock ：
- 138
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 50MHz
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 7.8mm
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Base Part Number :
- MJE172
- Max Power Dissipation :
- 1.5W
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 80V
- Height :
- 11.1mm
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Voltage - Rated DC :
- -80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Radiation Hardening :
- No
- Surface Mount :
- No
- Frequency :
- 50MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2006
- Max Collector Current :
- 3A
- Collector Base Voltage (VCBO) :
- 100V
- Current Rating :
- 3A
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Factory Lead Time :
- 6 Weeks
- Width :
- 3mm
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- hFE Min :
- 50
- Power Dissipation :
- 12.5W
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 1.7V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transition Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Pbfree Code :
- yes
- Datasheets
- MJE172G
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PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE172G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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