MJE172G

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Mfr.Part #
MJE172G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 3A TO126
Stock
138
In Stock :
138

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
80V
Max Power Dissipation :
1.5W
Contact Plating :
Tin
Package / Case :
TO-225AA, TO-126-3
RoHS Status :
ROHS3 Compliant
Power Dissipation :
12.5W
Radiation Hardening :
No
Time@Peak Reflow Temperature-Max (s) :
40
Length :
7.8mm
Pin Count :
3
Base Part Number :
MJE172
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 100mA 1V
Peak Reflow Temperature (Cel) :
260
Height :
11.1mm
Collector Emitter Saturation Voltage :
1.7V
Published :
2006
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Type :
PNP
hFE Min :
50
Collector Emitter Breakdown Voltage :
80V
Transition Frequency :
50MHz
Mounting Type :
Through Hole
Voltage - Rated DC :
-80V
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Gain Bandwidth Product :
50MHz
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Frequency :
50MHz
Number of Pins :
3
Factory Lead Time :
6 Weeks
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1.7V @ 600mA, 3A
Element Configuration :
Single
Max Collector Current :
3A
Operating Temperature :
-65°C~150°C TJ
Width :
3mm
Current Rating :
3A
Lead Free :
Lead Free
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Collector Base Voltage (VCBO) :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Number of Elements :
1
Weight :
4.535924g
Emitter Base Voltage (VEBO) :
7V
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE172G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Base Part Number:MJE172, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, MJE172G pinout, MJE172G datasheet PDF, MJE172G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE172G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE172G


PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

MJE172G Overview


In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

MJE172G Features


the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz


MJE172G Applications


There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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